Fluorinated polyimide/POSS hybrid polymers with high solubility and low dielectric constant
نویسندگان
چکیده
منابع مشابه
High dielectric constant oxides
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...
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ژورنال
عنوان ژورنال: Chinese Journal of Polymer Science
سال: 2016
ISSN: 0256-7679,1439-6203
DOI: 10.1007/s10118-016-1845-x